RENA and SoLayTec ship their 10th InPassion® system to a Chinese Tier One PV manufacturer
In January the combination of RENA and SoLayTec received an order for the turnkey InPERC technology. The customer will convert one of its current mono production lines to PERC technology. By applying this technology the average efficiency conversion will be over 0.8% higher compared to its standard efficiency conversion rate. Last year RENA and SoLayTec together with two well-known research institutes in Europe, imec (Belgium) and ISFH (Germany) published the results of cell efficiencies well over 20% by PERC cells incorporating spatial ALD Al2O3.
19462 DownloadsSoLayTec receives repeat Al2O3 order from Chinese Tier One cell manufacturer
A tier one cell manufacturer has ordered a second RENA-SoLayTec machine to start producing PERC cells in their production base of mono-Si wafers in China. The customer used the ALD Al2O3 InPassion LAB tool from RENA-SoLayTec in their R&D department, which has been used for their research of high-performance solar cells. This tier one cell manufacturer is one of the first adopters of the Al2O3 passivation technology and has recently announced results of average conversion efficiency of over 20% with their p-type mono-Si wafers.
18661 DownloadsSoLayTec receives prestigious International solar award for its product “InPassion ALD”
Imec, RENA and SoLayTec improve ALD passivation industrial PERC achieving 20.1%
Leuven (Belgium) – September 27, 2013
At next week’s European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC, Paris), the Belgian nanoelectronics research center imec, RENA, a leading supplier for wet chemical production tools, and SoLayTec, a supplier of Al2O3 deposition tools, present thin (160µm), large area (156x156mm2) industrial PERC-type silicon solar cells achieving a best cell efficiency of 20.1% using atomic layer deposition (ALD) Al2O3 passivation and standard screen printed contacts.
ISFH and SoLayTec demonstrate 20.1% PERC cell efficiency with spatial ALD Al2O3 rear passivation
ISFH and SoLayTec have achieved a conversion efficiency of 20.1% applying a 5nm thin spatial ALD Al2O3 layer as rear passivation of industrial-type PERC solar cells. So far, the spatial ALD process involved a Post Deposition Anneal (PDA) after the Al2O3 deposition. However, now ISFH and SoLayTec have proven that >20% PERC cells can be made without any additional PDA process.
18797 DownloadsRENA and SoLayTec’s InPERC technology reaches 18% Eff. on mc-Si at a major Chinese cell manufacturer
Smit Ovens and SoLayTec start co-operation on Large Area spatial ALD for Solliance CIGS/CZTS
Cooperation between technology leaders will accelerate development of cost efficient solution for Large Area ALD in Thin Film PV & Display market. Smit Ovens and SoLayTec are joining forces for Large Area applications of spatial ALD. The cooperation creates maximum leverage of the experience of both companies to allow for a fast market introduction. Applications foreseen include buffer and barrier layers for Thin film PV and layers for improved TFT structures as required for OLED displays.
15375 DownloadsTwo new customers select the flexible ALD production machine from SoLayTec
Last year at the 27th PVSEC in Frankfurt, SoLayTec introduced the InPassion ALD (Atomic Layer Deposition) mass production machine for low cost deposition of Al2O3. SoLayTec today announces that it installed its first two mass production machines. Both machines are installed at solar cell manufacturers of high efficiency crystalline solar cells in Asia. The total number of installed InPassion Lab to Fab by SoLayTec is eight, which makes SoLayTec market leader in spatial ALD equipment.
17538 DownloadsImec, RENA and SoLayTec present 19,6% high-efficiency i-PERC cell
EUPVSEC 2012 (Frankfurt, Germany) – September 24, 2012
At this week’s European Photovoltaic Solar Energy Conference and Exhibition (27th EUPVSEC, 24/09-28/09), imec, RENA and SoLayTec present thin (165µm), large area (156x156mm2) i-PERC-type Silicon solar cells with ALD (atomic layer deposition) passivation achieving a cell efficiency of 19.6% without selective emitter using an industrial screen printing process flow.
